onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLGD3502NT2G NTLGD3502NT2G

Manufacturer: ON Semiconductor
Win Source Part Number: 060655-NTLGD3502NT2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN (3x3)
Maximum Power Dissipation: 1.74W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.3A, 3.6A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Max Input Capacitance: 480pF @ 10V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4.3A, 4.5V
Alternative Parts (Cross-Reference): NTLGD3502NT1G;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Dual N-Ch MOSFET 20V 4.3A 60mR DFN6 Product overview: NTLGD3502NT2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTLGD3502NT2G can be used for catalog matching and distributor lookup.