onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3133PFT1G NTHD3133PFT1G

Manufacturer: ON Semiconductor
Win Source Part Number: 060641-NTHD3133PFT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A (Tj)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 7.4nC @ 4.5V
Max Input Capacitance: 680pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Portable Devices

Power MOSFET 20V 4.4A 80 mOhm Dual P-Channel ChipFET with Schottky Diode, ChipFET, 3000-REEL Product overview: NTHD3133PFT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, Schottky, 20V, 4.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, Schottky, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHD3133PFT1G can be used for catalog matching and distributor lookup.

P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™