onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF3055L108T3G NTF3055L108T3G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083873-NTF3055L108T 3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 15nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Motor Drive & Control, Power Management
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083873-NTF3055L108T 3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 15nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Motor Drive & Control, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF3055L108T3G - 1083873-NTF3055L108T3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF3055L108T3G
1083873-NTF3055L108T3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF3055L108T3G 1083873-NTF3055L108T3G
Manufacturer: ON Semiconductor Win Source Part Number: 1083873-NTF3055L108T 3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 15nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Motor Drive & Control, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 1083873-NTF3055L108T3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 15nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Motor Drive & Control, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - NTF3055L108T3GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTF3055L108T3GOSTR-ND
Single FETs, MOSFETs NTF3055L108T3GOSTR-ND
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)

N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTF3055L108T3G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTF3055L108T3G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTF3055L108T3G
MOSFET N-CH 60V 3A SOT223

MOSFET N-CH 60V 3A SOT223

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083873-NTF3055L108T3G NTF3055L108T3GOSTR-ND NTF3055L108T3G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF3055L108T3G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 1300 milliwatts
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