onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963NT4G NTD4963NT4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 004172-NTD4963NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.1A (Ta), 44A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 16.2nC @ 10V Max Input Capacitance: 1035pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 004172-NTD4963NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.1A (Ta), 44A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 16.2nC @ 10V Max Input Capacitance: 1035pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963NT4G - 004172-NTD4963NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963NT4G
004172-NTD4963NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963NT4G 004172-NTD4963NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 004172-NTD4963NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.1A (Ta), 44A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 16.2nC @ 10V Max Input Capacitance: 1035pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 004172-NTD4963NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.1A (Ta), 44A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 16.2nC @ 10V
Max Input Capacitance: 1035pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTD4963NT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD4963NT4GOSTR-ND
Single FETs, MOSFETs NTD4963NT4GOSTR-ND
N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W (Tc) Surface Mount DPAK

N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4963NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD4963NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD4963NT4G
MOSFET N-CH 30V 8.1A/44A DPAK

MOSFET N-CH 30V 8.1A/44A DPAK

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 004172-NTD4963NT4G NTD4963NT4GOSTR-ND NTD4963NT4G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963NT4G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1100 to 35700 milliwatts
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