Manufacturer: ON Semiconductor
Win Source Part Number: 1083714-NTB6412ANG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18.2 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 58A D2PAK
N-Channel 100V 58A (Tc) 167W (Tc) Surface Mount D²PAK
N-CH Power MOSFET 100V 58A D2PAK SMT Product overview: NTB6412ANG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB6412ANG can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 58A D2PAK
ON SEMICONDUCTOR NTB6412ANG MOSFET Transistor
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1083714-NTB6412ANG | NTB6412ANG | NTB6412ANG-ND | 278-NTB6412ANG | NTB6412ANG | 598-NTB6412ANG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB6412ANG | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 58A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | ON SEMICONDUCTOR NTB6412ANG MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||
| PD | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
