Manufacturer: ON Semiconductor
Win Source Part Number: 1083691-NTB30N06LT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 32nC @ 5V
Max Input Capacitance: 1150pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 46 mOhm @ 15A, 5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control, Industrial
N-Channel 60V 30A (Ta) 88.2W (Tc) Surface Mount D²PAK
MOSFET N-CH 60V 30A D2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1083691-NTB30N06LT4G | NTB30N06LT4GOS-ND | NTB30N06LT4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB30N06LT4G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 60 volts | ||
| PD | 88200 milliwatts |
