onsemi Single Bipolar Transistors NSVBCP5616MTWG

The NSVBCP5616MTWG is an NPN bipolar transistor in a WDFNW3 (CASE 515AA) surface-mount package, rated for a maximum collector-emitter voltage of 80 V and a continuous collector current of 1 A. It is designed for general-purpose amplifier applications and features a wettable flank package for optimal automated optical inspection. The device is AEC-Q101 qualified and PPAP capable, with Pb-free, halogen-free, and RoHS-compliant construction. Thermal resistance junction-to-ambient is 138 °C/W when mounted on a 100 mm² FR4 pad with 2 oz copper. It has a DC current gain (hFE) of 100 to 250 at IC = 500 mA and VCE = 2.0 V, with a collector-emitter saturation voltage of 0.50 V under the same conditions. Transition frequency is 140 MHz, and the operating junction temperature range is -65 °C to +150 °C.