onsemi Single, Pre-Biased Bipolar Transistors NSVBA123YMXWTBG

The NSVBA123YMXWTBG is a PNP bias resistor transistor (BRT) in the XDFNW3 package (1.00 × 1.00 × 0.38 mm) designed to replace discrete resistor networks in digital switching and IC input control applications. It integrates a 2.2 kΩ base resistor and a 10 kΩ base-emitter resistor, with a collector-emitter voltage rating of -50 V and a maximum collector current of 100 mA. The device has a total power dissipation of 450 mW and thermal resistance of 145 °C/W, operating from -65 °C to +150 °C. It meets AEC-Q101 standards and is RoHS compliant, Pb-free, and halogen-free. Marking follows the XXM format where XX is the device code and M is the date code.