onsemi Bipolar Transistor Arrays, Pre-Biased NSTB1005DXV5T5

The NSTB1005DXV5T1G is a dual common-base-collector bias resistor transistor in an SOT-553 package, integrating complementary NPN and PNP silicon transistors with monolithic bias resistor networks to simplify circuit design and reduce board space. The device has a collector-base voltage rating of 50 Vdc, collector-emitter voltage of 50 Vdc, and maximum collector current of 100 mAdc. Total device dissipation is 500 mW at 25°C when both junctions are heated, with a thermal resistance of 250°C/W. Junction and storage temperature ranges from -55°C to +150°C. The input resistors are specified between 32.9 kΩ and 61.1 kΩ with a ratio of 0.8 to 1.2. The part is Pb-free and supplied in 8 mm, 7-inch tape and reel packaging.