Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
100V 8A NPN Darlington Power BJT, DPAK Product overview: NJVMJD122T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 8A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD122T4G can be used for catalog matching and distributor lookup.
NPN Darlington Power Trans 100V 8A DPAK
NPN Darlington Power Trans 100V 8A DPAK
NPN Darlington Power Trans 100V 8A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 102167-NJVMJD122T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 4V @ 8A, 80mA
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 1000 @ 4A, 4V
Maximum Power Dissipation: 1.75W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Darlington Transistors BIP DPAK NPN 8A 100V TR
TRANS NPN DARL 100V 8A DPAK
TRANS NPN DARL 100V 8A DPAK
100V 1000@4V,4A NPN 8A 1.75W DPAK Darlington Transistors ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Darlington Transistors | Darlington Transistors | Transistors | Darlington Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Darlington Transistors |
| Product Number | NJVMJD122T4GOSCT-ND | 276-NJVMJD122T4G | 7905444 | 7905444P | 102167-NJVMJD122T4G | NJVMJD122T4G | NJVMJD122T4G | NJVMJD122T4G | NJVMJD122T4G |
| Product Name | Single Bipolar Transistors | 100V 8A DPAK Bipolar Transistor | Darlington Pairs | Darlington Pairs | TRANSISTORS - Transistors (BJT) - Single - NJVMJD122T4G | Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single Bipolar Transistors | Triode/MOS Tube/Transistor >> Darlington Transistors |
| Polarity | NPN | NPN | NPN | NPN | NPN; NPN - Darlington | NPN - Darlington; NPN | NPN | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | SOT3; DPAK-3 | DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |||
| Transistor Grade / Operating Range | Automotive | ||||||||
| IC(max) | 8000 milliamps | 8000 milliamps | 8000 milliamps | 8000 milliamps | |||||
| VCEO | 100 volts | 100 volts | 100 volts | 100 volts |
