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IGBT 600V 24A 54W Through Hole TO-220F-3FS
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 24 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 54 W
Package Type = TO-220F
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 24 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 54 W
Package Type = TO-220F
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 24 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 54 W
Package Type = TO-220F
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
IGBT 600V 24A TO220F-3FS
NGTB15N60R2FG - Insulated Gate Bipolar Transistor, 24A, 600V, N-Channel
Manufacturer: ON Semiconductor
Win Source Part Number: 1231144-NGTB15N60R2F
Manufacturer Homepage: www.onsemi.com
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
IGBT, SINGLE, 600V, 24A, TO-220F-3; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:54W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Rochester Electronics | Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGTB15N60R2FGOS-ND | 8829806P | NGTB15N60R2FG | NGTB15N60R2FG | 1231144-NGTB15N60R2FG | 45Y1418 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBTs - Single - NGTB15N60R2FG | Igbt, Single, 600V, 24A, To-220F-3; Continuous Collector Current Onsemi | ||
| TJ | 175 C (347 F) | 175 C (347 F) | ? to 175 C (? to 347 F) | |||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; TO-220F | TO-220; TO-220-3 | SOT3 | TO-3; TO-220 | |
| Packing Method | Tube | Tube; Tube | Tube; Tube |
