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Infineon Technologies AG Small Signal/Small Power MOSFET BSP316P

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Small Signal/Small Power MOSFET - BSP316P - Infineon Technologies AG
Neubiberg, Germany
Small Signal/Small Power MOSFET
BSP316P
Small Signal/Small Power MOSFET BSP316P
P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Onboard charger Telecom Applications Vacuum cleaner Designers who used this product also designed with XMC4700-F100K2048 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 IPD100N04S4-02 | Automotive MOSFET ICE2QR2280G | Quasi Resonant CoolSET™ BSS139 | N-Channel Depletion Mode MOSFET TLE9180D-31QK | Gate Driver ICs 2ED4820-EM | Automotive Gate Driver ICs AUIR2085S | Gate Driver ICs SPD30P06P G | P-Channel Power MOSFET AUIRF5210S | Automotive MOSFET IPG16N10S4-61A | Automotive MOSFET TLE4266-2G | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear IPP023NE7N3 G | N-Channel Power MOSFET IDH20G65C5 | CoolSiC™ Schottky Diodes IHW30N160R5 | IGBT Discretes TLE4250-2G | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear BSS131 | Small signal/small power MOSFET IPD60N10S4L-12 | Automotive MOSFET BSR316P | Small signal/small power MOSFET TLE42764DV | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear TLE42754G | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear XMC4700-F100K2048 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 IPD100N04S4-02 | Automotive MOSFET ICE2QR2280G | Quasi Resonant CoolSET™ BSS139 | N-Channel Depletion Mode MOSFET TLE9180D-31QK | Gate Driver ICs 2ED4820-EM | Automotive Gate Driver ICs AUIR2085S | Gate Driver ICs SPD30P06P G | P-Channel Power MOSFET 1 2 3 4 5

P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.


Summary of Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable

Benefits

  • Low RDS(on) provides higher efficiency and extends battery life
  • Small packages save PCB space
  • Best-in-class quality and reliability

Potential Applications

  • Automotive
  • Lighting
  • Battery management
  • Load switch
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom

Applications

  • Vacuum cleaner

Designers who used this product also designed with


  • XMC4700-F100K2048 AA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • IPD100N04S4-02 |
    Automotive MOSFET
  • ICE2QR2280G |
    Quasi Resonant CoolSET™
  • BSS139 |
    N-Channel Depletion Mode MOSFET
  • TLE9180D-31QK |
    Gate Driver ICs
  • 2ED4820-EM |
    Automotive Gate Driver ICs
  • AUIR2085S |
    Gate Driver ICs
  • SPD30P06P G |
    P-Channel Power MOSFET
  • AUIRF5210S |
    Automotive MOSFET
  • IPG16N10S4-61A |
    Automotive MOSFET
  • TLE4266-2G |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • IPP023NE7N3 G |
    N-Channel Power MOSFET
  • IDH20G65C5 |
    CoolSiC™ Schottky Diodes
  • IHW30N160R5 |
    IGBT Discretes
  • TLE4250-2G |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • BSS131 |
    Small signal/small power MOSFET
  • IPD60N10S4L-12 |
    Automotive MOSFET
  • BSR316P |
    Small signal/small power MOSFET
  • TLE42764DV |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • TLE42754G |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • XMC4700-F100K2048 AA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • IPD100N04S4-02 |
    Automotive MOSFET
  • ICE2QR2280G |
    Quasi Resonant CoolSET™
  • BSS139 |
    N-Channel Depletion Mode MOSFET
  • TLE9180D-31QK |
    Gate Driver ICs
  • 2ED4820-EM |
    Automotive Gate Driver ICs
  • AUIR2085S |
    Gate Driver ICs
  • SPD30P06P G |
    P-Channel Power MOSFET

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Supplier's Site Datasheet
 - 7528215 - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry. · AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant Channel Type = P Maximum Continuous Drain Current = 680 mA Maximum Drain Source Voltage = 100 V Maximum Drain Source Resistance = 2.3 Ohms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Gate Source Voltage = -20 V, +20 V Package Type = SOT-223 Mounting Type = Surface Mount Pin Count = 3+Tab

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant
Channel Type = P
Maximum Continuous Drain Current = 680 mA
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 2.3 Ohms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = SOT-223
Mounting Type = Surface Mount
Pin Count = 3+Tab

Supplier's Site
 - 7528215P - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry. · AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant Channel Type = P Maximum Continuous Drain Current = 680 mA Maximum Drain Source Voltage = 100 V Maximum Drain Source Resistance = 2.3 Ohms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Gate Source Voltage = -20 V, +20 V Package Type = SOT-223 Mounting Type = Surface Mount Pin Count = 3+Tab Delivery on production packaging - Reel. This product is non-returnable.

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant
Channel Type = P
Maximum Continuous Drain Current = 680 mA
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 2.3 Ohms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = SOT-223
Mounting Type = Surface Mount
Pin Count = 3+Tab
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
END - OF - LIFE - BSP316P - 1154848-BSP316P - Win Source Electronics
Yishun, Singapore
END - OF - LIFE - BSP316P
1154848-BSP316P
END - OF - LIFE - BSP316P 1154848-BSP316P
Manufacturer: Infineon Technologies Win Source Part Number: 1154848-BSP316P Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154848-BSP316P
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Supplier's Site

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSP316P 7528215 1154848-BSP316P
Product Name Small Signal/Small Power MOSFET END - OF - LIFE - BSP316P
Polarity P-Channel; P P-Channel
Transistor Technology / Material Si/SiC
Operating Mode Enhancement
rDS(on) 1.8 ohms 2.3 ohms
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