onsemi FET, MOSFET Arrays NDS8958

Description
Mosfet Array N and P-Channel 30V 5.3A, 4A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel 30V 5.3A, 4A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NDS8958TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NDS8958TR-ND
FET, MOSFET Arrays NDS8958TR-ND
Mosfet Array N and P-Channel 30V 5.3A, 4A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 5.3A, 4A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8958 - 104051-NDS8958 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8958
104051-NDS8958
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8958 104051-NDS8958
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 104051-NDS8958 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A, 4A Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 720pF @ 15V Maximum Rds On at Id,Vgs: 35 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 104051-NDS8958
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A, 4A
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 720pF @ 15V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS8958 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS8958
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS8958
MOSFET N/P-CH 30V 5.3A/4A 8SOIC

MOSFET N/P-CH 30V 5.3A/4A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDS8958TR-ND 104051-NDS8958 NDS8958
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8958 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity P-Channel
V(BR)DSS 30 volts
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