onsemi Single FETs, MOSFETs NDS355AN-NB9L007A

Description
N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
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Description
N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - NDS355AN-NB9L007A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS355AN-NB9L007A-ND
Single FETs, MOSFETs NDS355AN-NB9L007A-ND
N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1081909-NDS355AN-NB9L007A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1081909-NDS355AN-NB9L007A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1081909-NDS355AN-NB9L007A
Win Source Part Number: 1081909-NDS355AN-NB9 L007A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 500mW (Ta) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 79 pct. MSL Level: Vendor Undefined REACH Status: REACH Unaffected Mfr: Fairchild Semiconductor Other Names: 2156S355AN-NB9L007A- 600039 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1081909-NDS355AN-NB9L007A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 79 pct.
MSL Level: Vendor Undefined
REACH Status: REACH Unaffected
Mfr: Fairchild Semiconductor
Other Names: 2156S355AN-NB9L007A-600039
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS355AN-NB9L007A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS355AN-NB9L007A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS355AN-NB9L007A
MOSFET N-CH 30V 1.7A SOT23-3

MOSFET N-CH 30V 1.7A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number NDS355AN-NB9L007A-ND 1081909-NDS355AN-NB9L007A NDS355AN-NB9L007A
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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