Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 041905-NDP6060
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 60nC @ 5V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 20 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET N-CH 60V 48A TO220-3
N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-220-3
MOSFETs N-Channel FET Enhancement Mode Product overview: NDP6060 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-NDP6060 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 48A TO220-3
MOSFET Transistor, N Channel, 48 A, 60 V, 25 mohm, 10 V, 2.9 V RoHS Compliant: Yes
MOSFET TRANSISTOR, N CHANNEL, 48 AMP, 60 V, 25 MOHM, 10 V, 2.9 V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Channel FET Enhancement Mode
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 041905-NDP6060 | NDP6060 | NDP6060-ND | 2088-NDP6060 | NDP6060 | 97K6444 | 16147426 | NDP6060 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6060 | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 48 A, 60 V, 25 Mohm, 10 V, 2.9 V Rohs Compliant Onsemi | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 100000 milliwatts | 100000 milliwatts | 100 milliwatts | |||||
| TJ | -65 to 175 C (-85 to 347 F) | -65 to 175 C (-85 to 347 F) | ||||||
| Package Type | TO-220; SOT3; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-3 |