onsemi Single FETs, MOSFETs NDF05N50ZG

Description
N-Channel 500V 5.5A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 500V 5.5A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - NDF05N50ZGOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDF05N50ZGOS-ND
Single FETs, MOSFETs NDF05N50ZGOS-ND
N-Channel 500V 5.5A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 500V 5.5A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDF05N50ZG - 060142-NDF05N50ZG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDF05N50ZG
060142-NDF05N50ZG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDF05N50ZG 060142-NDF05N50ZG
Manufacturer: ON Semiconductor Win Source Part Number: 060142-NDF05N50ZG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 632pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 060142-NDF05N50ZG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 632pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDF05N50ZG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDF05N50ZG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDF05N50ZG
MOSFET N-CH 500V 5.5A TO220FP

MOSFET N-CH 500V 5.5A TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDF05N50ZGOS-ND 060142-NDF05N50ZG NDF05N50ZG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDF05N50ZG Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
V(BR)DSS 500 volts
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