N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Extended temperature range Tj = 175 °C
Trench MOSFET technology
Very fast switching
Side wettable flanks for optical solder inspection
ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
AEC-Q101 qualified
Applications
DC to DC conversion
High-speed line driver
Low-side load switch
Switching circuits
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- Very fast switching
- Side wettable flanks for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
- AEC-Q101 qualified
Applications
- DC to DC conversion
- High-speed line driver
- Low-side load switch
- Switching circuits
