onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - N302AP N302AP

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 059791-N302AP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 345W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 11000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - N302AP - 059791-N302AP - Win Source Electronics
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 059791-N302AP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 345W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 11000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - N302AP - 059791-N302AP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - N302AP
059791-N302AP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - N302AP 059791-N302AP
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 059791-N302AP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 345W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 11000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 059791-N302AP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 345W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 11000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 059791-N302AP
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - N302AP
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 345000 milliwatts
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