onsemi Single Bipolar Transistors MPS2222

NPN silicon bipolar transistor for general-purpose applications in a TO-92 package. The device has a collector-emitter voltage rating of 30 V, a collector-base voltage rating of 60 V, and an emitter-base voltage rating of 5.0 V. It supports a continuous collector current of 600 mA and a total device dissipation of 625 mW at 25°C ambient temperature. The junction-to-ambient thermal resistance is 200 °C/W. The current gain (hFE) ranges from 75 to 300 at 10 mA collector current and 10 V collector-emitter voltage, and the current gain-bandwidth product is 250 MHz. Switching characteristics and low-noise performance are not specified for this variant.