onsemi Single Bipolar Transistors MJE172

The MJE172 is a PNP silicon power transistor designed for low power audio amplifier and low current, high speed switching applications. It is packaged in a TO-225 case (Case 77-09, Style 1) with three leads. The device has a collector-emitter voltage rating of 80 V, a continuous collector current of 3 A, and a total power dissipation of 12.5 W at a case temperature of 25°C or 1.5 W at an ambient temperature of 25°C. Thermal resistance from junction to case is 10°C/W, and from junction to ambient is 83.4°C/W. The DC current gain (hFE) ranges from 12 to 50 under specified current conditions. The current-gain bandwidth product is 50 MHz. The transistor meets UL 94 V-0 flammability standards and is RoHS compliant with a Pb-free package. Operating and storage junction temperature ranges from -65°C to +150°C.