The MGSF2N02EL is a power MOSFET featuring a maximum drain-to-source voltage of 20V and a continuous drain current rating of 2.8A. It is housed in a compact SOT-23 surface mount package, making it suitable for space-constrained applications. The device exhibits low on-resistance (RDS(on)) values, which contribute to higher efficiency and reduced power loss, thereby extending battery life in portable and battery-powered devices. It is AEC-Q101 qualified, indicating suitability for automotive applications, and is compliant with RoHS standards. The MOSFET is designed for use in DC-DC converters and power management circuits, particularly in devices such as computers, printers, and mobile phones. The operating temperature range is from -55¬8C to 150¬8C, ensuring reliability in various environments.
N-Channel 20V 2.8A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 2.8A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 2.8A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
N-Ch MOSFET, 20V, 2.8A, 85mR, SOT-23 Product overview: MGSF2N02ELT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.8A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.8A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MGSF2N02ELT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 023223-MGSF2N02ELT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.5nC @ 4V
Max Input Capacitance: 150pF @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.6A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
MOSFET NFET SOT23 20V 2.8A 85mOhm
MOSFET N-CH 20V 2.8A SOT23-3
MOSFET Transistor, N Channel, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V RoHS Compliant: Yes
MOSFET, 20V, 2.8A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET, 20V, 2.8A, SOT-23, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mV RoHS Compliant: Yes
20V 2.8A 1.25W 85mΩ@4.5V,3.6A 1V@250uA N Channel SOT-23-3 MOSFETs ROHS
MOSFET N-CH 20V 2.8A SOT23-3
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|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MGSF2N02ELT1GOSDKR-ND | 278-MGSF2N02ELT1G | 023223-MGSF2N02ELT1G | 7925675 | 7925675P | MGSF2N02ELT1G | MGSF2N02ELT1G | 58M9083 | 09R9428 | MGSF2N02ELT1G | MGSF2N02ELT1G |
| Product Name | Single FETs, MOSFETs | 20V 2.8A SOT-23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - MGSF2N02ELT1G | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 2.8 A, 20 V, 0.078 Ohm, 4.5 V, 1 V Rohs Compliant Onsemi | Mosfet, 20V, 2.8A, Sot-23; Channel Type Onsemi | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3; SOT23 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| PD | 1250 milliwatts | 1250 milliwatts | 1250 milliwatts | 1250 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts |
