onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MCH3376-TL-W MCH3376-TL-W

The MCH3376-TL-W is a P-Channel MOSFET designed for low-voltage applications, with a maximum drain-to-source voltage of -20V and a continuous drain current rating of -1.5A. It features a low on-resistance of 241m,Ѷ, which contributes to efficient power management. The device supports low gate drive voltages, starting from 1.8V, making it suitable for various low-power applications. This MOSFET is equipped with an ESD diode-protected gate, enhancing its reliability in sensitive environments. It is compliant with RoHS standards and is packaged in a compact MCPH3 form factor, suitable for surface mount applications. The product is rated for a maximum junction temperature of 150¬8C and has a power dissipation capability of 800mW when mounted on a ceramic substrate. Engineers should consider the MCH3376-TL-W for projects requiring efficient switching performance and low power loss in compact designs. However, it is important to note that the part is listed as obsolete, which may affect availability and support.