NPN epitaxial silicon transistor for VHF applications, housed in a TO-92 package with dimensions of 4.58 mm length, 3.60 mm body width, and 1.27 mm lead spacing. It has a collector-base voltage rating of 40 V, collector-emitter voltage of 30 V, and maximum collector current of 100 mA. Power dissipation is 350 mW at 25°C, derating at 2.8 mW/°C above 25°C. Junction temperature ranges from -55°C to 135°C. DC current gain (hFE) is a minimum of 30 at 8 mA collector current, with current gain bandwidth product of 400 to 620 MHz. Thermal resistance from junction to ambient is 357°C/W. Meets RoHS compliance and is in full production status.
RF Small Signal Bipolar Transistor, 0.1A, Very High Frequency Band, NPN, TO-92
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | KSP24TA |
| Polarity | NPN |
