The ISL9N308AD3 is an N-channel logic level UltraFET trench power MOSFET designed for PWM-optimized switching applications such as DC/DC converters. It is packaged in a TO-251AA (I-PAK) case, rated for a drain-to-source voltage of 30 V and continuous drain current of 35 A limited by the package. The device has a typical on-resistance of 0.0064 Ω at 10 V gate-source voltage and 0.010 Ω at 4.5 V, with a total gate charge of 24 nC at 5 V. Operating and storage junction temperatures range from -55 °C to 175 °C. Thermal resistance from junction to case is 1.5 °C/W. The part meets industry standards for power MOSFET performance and reliability, including Fairchild's internal reliability and quality benchmarks.
N-CHANNEL POWER MOSFET Product overview: ISL9N308AD3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISL9N308AD3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-ISL9N308AD3 |
| Product Name | N-Channel MOSFET Transistor |
| PD | 100000 milliwatts |
