N-Channel MOSFET, 200V, 18A, 180mR, TO-220 Product overview: IRL640A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 18A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL640A can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132636-IRL640A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 56nC @ 5V
Max Input Capacitance: 1705pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control
Quantity per package: 1k pcs
N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 18 A, 200 V, 180 mohm, 5 V, 2 V RoHS Compliant: Yes
MOSFET 200V N-Channel a-FET Logic Level
MOSFET N-CH 200V 18A TO220-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRL640A | 132636-IRL640A | IRL640A-ND | 58K1740 | 31Y2090 | IRL640A | IRL640A |
| Product Name | N-Channel 200V 18A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A | Single FETs, MOSFETs | N Channel Mosfet, 200V, 18A, To-220; Channel Type Onsemi | Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 110000 milliwatts | 110000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 200 volts |
