N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132636-IRL640A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 56nC @ 5V
Max Input Capacitance: 1705pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control
Quantity per package: 1k pcs
MOSFET N-CH 200V 18A TO220-3
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 18 A, 200 V, 180 mohm, 5 V, 2 V RoHS Compliant: Yes
MOSFET 200V N-Channel a-FET Logic Level
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRL640A-ND | 132636-IRL640A | IRL640A | 58K1740 | 31Y2090 | IRL640A |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 200V, 18A, To-220; Channel Type Onsemi | Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-3; TO-220 | TO-3 | |
| V(BR)DSS | 200 volts | |||||
| PD | 110000 milliwatts |
