onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A IRL640A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132636-IRL640A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 56nC @ 5V Max Input Capacitance: 1705pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Motor Drive & Control Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A - 132636-IRL640A - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRL640A-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 200V, 18A, To-220; Channel Type Onsemi - 58K1740 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Onsemi - 31Y2090 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL640A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132636-IRL640A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 56nC @ 5V Max Input Capacitance: 1705pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Motor Drive & Control Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A - 132636-IRL640A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A
132636-IRL640A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A 132636-IRL640A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132636-IRL640A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 56nC @ 5V Max Input Capacitance: 1705pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Motor Drive & Control Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132636-IRL640A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 56nC @ 5V
Max Input Capacitance: 1705pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 9A, 5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - IRL640A-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL640A-ND
Single FETs, MOSFETs IRL640A-ND
N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3

N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3

Buy Now Datasheet
N Channel Mosfet, 200V, 18A, To-220; Channel Type Onsemi - 58K1740 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 18A, To-220; Channel Type Onsemi
58K1740
N Channel Mosfet, 200V, 18A, To-220; Channel Type Onsemi 58K1740
N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 18A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Onsemi - 31Y2090 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Onsemi
31Y2090
Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Onsemi 31Y2090
MOSFET Transistor, N Channel, 18 A, 200 V, 180 mohm, 5 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 18 A, 200 V, 180 mohm, 5 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRL640A
MOSFET IRL640A
MOSFET 200V N-Channel a-FET Logic Level

MOSFET 200V N-Channel a-FET Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL640A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL640A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL640A
MOSFET N-CH 200V 18A TO220-3

MOSFET N-CH 200V 18A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 132636-IRL640A IRL640A-ND 58K1740 31Y2090 IRL640A IRL640A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640A Single FETs, MOSFETs N Channel Mosfet, 200V, 18A, To-220; Channel Type Onsemi Mosfet Transistor, N Channel, 18 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts
PD 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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