onsemi Transistor IRF530A

Description
POWER MOSFET, N CHANNEL, 100 V, 14 A, 0.11 OHM, TO-220, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
POWER MOSFET, N CHANNEL, 100 V, 14 A, 0.11 OHM, TO-220, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 16130988 - Radwell International
Willingboro, NJ, United States
Transistor
16130988
Transistor 16130988
POWER MOSFET, N CHANNEL, 100 V, 14 A, 0.11 OHM, TO-220, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 100 V, 14 A, 0.11 OHM, TO-220, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRF530A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF530A-ND
Single FETs, MOSFETs IRF530A-ND
N-Channel 100V 14A (Tc) 55W (Tc) Through Hole TO-220-3

N-Channel 100V 14A (Tc) 55W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530A - 1046512-IRF530A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530A
1046512-IRF530A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530A 1046512-IRF530A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1046512-IRF530A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 790pF @ 25V Maximum Rds On at Id,Vgs: 110 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1046512-IRF530A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 790pF @ 25V
Maximum Rds On at Id,Vgs: 110 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
N Channel Mosfet, 100V, 14A, To-220; Channel Type Onsemi - 58K1735 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 14A, To-220; Channel Type Onsemi
58K1735
N Channel Mosfet, 100V, 14A, To-220; Channel Type Onsemi 58K1735
N CHANNEL MOSFET, 100V, 14A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:100V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 14A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:100V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 100V, 14A, To-220-3; Transistor Polarity Onsemi - 71AC3005 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 14A, To-220-3; Transistor Polarity Onsemi
71AC3005
Mosfet, N-Ch, 100V, 14A, To-220-3; Transistor Polarity Onsemi 71AC3005
MOSFET, N-CH, 100V, 14A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 14A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
IRF530A
MOSFET IRF530A
MOSFET TO-220 N-Ch A-FET

MOSFET TO-220 N-Ch A-FET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF530A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF530A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF530A
MOSFET N-CH 100V 14A TO220-3

MOSFET N-CH 100V 14A TO220-3

Supplier's Site

Technical Specifications

  Radwell International DigiKey Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 16130988 IRF530A-ND 1046512-IRF530A 58K1735 71AC3005 IRF530A IRF530A
Product Name Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530A N Channel Mosfet, 100V, 14A, To-220; Channel Type Onsemi Mosfet, N-Ch, 100V, 14A, To-220-3; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-3; TO-220 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 100 volts
PD 55000 milliwatts
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