N-Channel 100V 14A (Tc) 55W (Tc) Through Hole TO-220-3
100V N-CH MOSFET TO-220AB 14A 110mR Product overview: IRF530A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF530A can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1046512-IRF530A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 790pF @ 25V
Maximum Rds On at Id,Vgs: 110 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
POWER MOSFET, N CHANNEL, 100 V, 14 A, 0.11 OHM, TO-220, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 100V, 14A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:100V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 100V, 14A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 14A TO220-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF530A-ND | 278-IRF530A | 1046512-IRF530A | 16130988 | 58K1735 | 71AC3005 | IRF530A | IRF530A |
| Product Name | Single FETs, MOSFETs | 100V 14A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530A | Transistor | N Channel Mosfet, 100V, 14A, To-220; Channel Type Onsemi | Mosfet, N-Ch, 100V, 14A, To-220-3; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-3; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 | |||
| PD | 55000 milliwatts | 55000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
