75A, 80V, 0.01ohm, N-Channel Power MOSFET, TO-220AB
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204927-HUFA75545P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 270W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 235nC @ 20V
Max Input Capacitance: 3750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Audio, Signal Processing
N-Channel 80V 75A (Tc) 270W (Tc) Through Hole TO-220-3
MOSFET N-CH 80V 75A TO220-3
| Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | HUFA75545P3 | 204927-HUFA75545P3 | HUFA75545P3-ND | HUFA75545P3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75545P3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |
| rDS(on) | 0.0100 ohms | |||
| Package Type | TO-220; TO-220AB | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 |
| V(BR)DSS | 80 volts |
