N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA
N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA
N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 017077-HUF75329D3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 128W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 20V
Max Input Capacitance: 1060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFETs 20a 55V N-Channel UltraFET Product overview: HUF75329D3ST from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20a, 55V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20a, 55V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-HUF75329D3ST can be used for catalog matching and distributor lookup.
POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 55V, 0.026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:128W RoHS Compliant: Yes
MOSFET, N-CH, 55V, 20A, 175DEG C, 128W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 55V 20A TO252AA
MOSFET 20a 55V N-Channel UltraFET
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | HUF75329D3STFSDKR-ND | 017077-HUF75329D3ST | 2088-HUF75329D3ST | 21491164 | 81R3933 | 05B7196 | HUF75329D3ST | HUF75329D3ST |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75329D3ST | N-Channel 20a 55V MOSFET Transistor | Transistor | Mosfet Transistor; Channel Type Onsemi | Mosfet, N-Ch, 55V, 20A, 175Deg C, 128W; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); TO-252AA | Reel | TO-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| V(BR)DSS | 55 volts | |||||||
| PD | 128000 milliwatts | 128 milliwatts | 128000 milliwatts |
