The H11A5VM is a 6-pin dual in-line package phototransistor optocoupler containing a gallium arsenide infrared LED and a silicon phototransistor, designed for isolation in power supply regulators, digital logic inputs, and microprocessor interfaces. It has an input-forward current rating of 60 mA, collector-emitter voltage of 30 V, and current transfer ratio of 30% minimum with 10 mA input current and 10 V collector-emitter bias. The device supports input-output isolation voltage of 7500 VAC peak and isolation resistance of 10^11 Ω at 500 VDC. Operating temperature ranges from -40°C to 100°C, and storage temperature from -40°C to 150°C. UL and VDE safety recognitions are listed for the series.
Transistor Output Optocouplers Optocoupler Phototransistor Product overview: H11A5VM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A5VM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A5VM |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
