N-Channel 250V 830mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4
250V N-Channel MOSFET, 0.83A, 1.75 Ohm, SOT-223 Product overview: FQT4N25TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 0.83A, 1.75 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 0.83A, 1.75 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQT4N25TF can be used for catalog matching and distributor lookup.
POWER FIELD-EFFECT TRANSISTOR, 0
MOSFET N-CH 250V 830MA SOT223-4
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001260-FQT4N25TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Tc)
Family Name: FQT4N25
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 830mA (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 5.6nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.75 Ohm @ 415mA, 10V
Alternative Parts (Cross-Reference): SiHFL214T; IRFL214; SiHFL214-GE3; SiHFL214T-E3 ;
Introduction Date: May 21, 2001
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Quantity per package: 4k pcs
MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:830mA; On Resistance Rds(on):1.38ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 250V 830MA SOT223-4
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQT4N25TFTR-ND | 278-FQT4N25TF | FQT4N25TF | 001260-FQT4N25TF | 31Y1564 | FQT4N25TF | FQT4N25TF |
| Product Name | Single FETs, MOSFETs | N-Channel 250V 0.83A 1.75 Ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT4N25TF | Mosfet, N-Ch, 250V, 0.83A, Sot-223-3; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223-4 | TO-3; SOT223 | TO-261-4, TO-261AA | ||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
