onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT1N80TF_WS FQT1N80TF_WS

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039969-FQT1N80TF_WS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-3 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 200mA (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 7.2nC @ 10V Max Input Capacitance: 195pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 20 Ohm @ 100mA, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance