onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C FQPF7N80C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001249-FQPF7N80C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001249-FQPF7N80C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C - 001249-FQPF7N80C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C
001249-FQPF7N80C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C 001249-FQPF7N80C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001249-FQPF7N80C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001249-FQPF7N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF7N80COS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF7N80COS-ND
Single FETs, MOSFETs FQPF7N80COS-ND
N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3

N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Singapore
N-Channel 800V 7A 1.9 Ohm MOSFET Transistor
278-FQPF7N80C
N-Channel 800V 7A 1.9 Ohm MOSFET Transistor 278-FQPF7N80C
800V N-Channel Power MOSFET, 7A, 1.9 Ohm, TO-220F Product overview: FQPF7N80C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 7A, 1.9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 7A, 1.9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF7N80C can be used for catalog matching and distributor lookup.

800V N-Channel Power MOSFET, 7A, 1.9 Ohm, TO-220F Product overview: FQPF7N80C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 7A, 1.9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 7A, 1.9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF7N80C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQPF7N80C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF7N80C
Single FETs, MOSFETs FQPF7N80C
MOSFET N-CH 800V 6.6A TO220F

MOSFET N-CH 800V 6.6A TO220F

Supplier's Site Datasheet
Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi - 84H4766 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi
84H4766
Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi 84H4766
MOSFET, N-CH, 800V, 6.6A, 150DEG C, 56W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 6.6A, 150DEG C, 56W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF7N80C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF7N80C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF7N80C
MOSFET N-CH 800V 6.6A TO220F

MOSFET N-CH 800V 6.6A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 800V N-Ch Q-FET advance C-Series

MOSFET 800V N-Ch Q-FET advance C-Series

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001249-FQPF7N80C FQPF7N80COS-ND 278-FQPF7N80C FQPF7N80C 84H4766 FQPF7N80C FQPF7N80C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C Single FETs, MOSFETs N-Channel 800V 7A 1.9 Ohm MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 800 volts 800 volts
PD 56000 milliwatts 56000 milliwatts 56000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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