onsemi Single FETs, MOSFETs FQPF7N80C

Description
N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3
  • Single FETs, MOSFETs - FQPF7N80COS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C - 001249-FQPF7N80C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF7N80C - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi - 84H4766 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF7N80C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF7N80COS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF7N80COS-ND
Single FETs, MOSFETs FQPF7N80COS-ND
N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3

N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C - 001249-FQPF7N80C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C
001249-FQPF7N80C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C 001249-FQPF7N80C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001249-FQPF7N80C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001249-FQPF7N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF7N80C - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF7N80C
Single FETs, MOSFETs FQPF7N80C
MOSFET N-CH 800V 6.6A TO220F

MOSFET N-CH 800V 6.6A TO220F

Supplier's Site Datasheet
Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi - 84H4766 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi
84H4766
Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi 84H4766
MOSFET, N-CH, 800V, 6.6A, 150DEG C, 56W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 6.6A, 150DEG C, 56W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF7N80C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF7N80C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF7N80C
MOSFET N-CH 800V 6.6A TO220F

MOSFET N-CH 800V 6.6A TO220F

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF7N80C
MOSFET FQPF7N80C
MOSFET 800V N-Ch Q-FET advance C-Series

MOSFET 800V N-Ch Q-FET advance C-Series

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQPF7N80COS-ND 001249-FQPF7N80C FQPF7N80C 84H4766 FQPF7N80C FQPF7N80C
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C Single FETs, MOSFETs Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack TO-3 TO-220; TO-220-3 Full Pack
V(BR)DSS 800 volts 800 volts
PD 56000 milliwatts 56000 milliwatts
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