Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001249-FQPF7N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3
800V N-Channel Power MOSFET, 7A, 1.9 Ohm, TO-220F Product overview: FQPF7N80C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 7A, 1.9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 7A, 1.9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF7N80C can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 6.6A TO220F
MOSFET, N-CH, 800V, 6.6A, 150DEG C, 56W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET N-CH 800V 6.6A TO220F
MOSFET 800V N-Ch Q-FET advance C-Series
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001249-FQPF7N80C | FQPF7N80COS-ND | 278-FQPF7N80C | FQPF7N80C | 84H4766 | FQPF7N80C | FQPF7N80C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N80C | Single FETs, MOSFETs | N-Channel 800V 7A 1.9 Ohm MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 6.6A, 150Deg C, 56W; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 800 volts | 800 volts | |||||
| PD | 56000 milliwatts | 56000 milliwatts | 56000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |