Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040352-FQP8N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 178W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2050pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.55 Ohm @ 4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N-Channel 800V 8A (Tc) 178W (Tc) Through Hole TO-220-3
MOSFETs 800V N-Ch Q-FET advance C-Series Product overview: FQP8N80C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP8N80C can be used for catalog matching and distributor lookup.
MOSFET 800V N-Ch Q-FET advance C-Series
MOSFET, N CH, 800V, 8A, TO-220AB-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):1.29OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N CH, 800V, 8A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 800V 8A TO220-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 040352-FQP8N80C | FQP8N80CFS-ND | 2088-FQP8N80C | 6715199 | 6715199P | FQP8N80C | 49272440 | 31Y1557 | FQP8N80C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP8N80C | Single FETs, MOSFETs | 800V MOSFET Transistor | MOSFETs | MOSFETs | MOSFET | Transistor | Mosfet, N Ch, 800V, 8A, To-220Ab-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 800 volts | ||||||||
| PD | 178000 milliwatts | 178 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-220; To-220ab | TO-220; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 |
