onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N60C FQP6N60C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 127243-FQP6N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 810pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 127243-FQP6N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 810pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N60C - 127243-FQP6N60C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N60C
127243-FQP6N60C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N60C 127243-FQP6N60C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 127243-FQP6N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 810pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 127243-FQP6N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 810pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Singapore
N-Channel 600V 5.5A TO-220 MOSFET Transistor
278-FQP6N60C
N-Channel 600V 5.5A TO-220 MOSFET Transistor 278-FQP6N60C
600V N-Channel MOSFET, 5.5A, 2R, TO-220 Product overview: FQP6N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 5.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP6N60C can be used for catalog matching and distributor lookup.

600V N-Channel MOSFET, 5.5A, 2R, TO-220 Product overview: FQP6N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 5.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP6N60C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP6N60C-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP6N60C-ND
Single FETs, MOSFETs FQP6N60C-ND
N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3

N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP6N60C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP6N60C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP6N60C
MOSFET N-CH 600V 5.5A TO220-3

MOSFET N-CH 600V 5.5A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP6N60C
MOSFET FQP6N60C
MOSFET 600V N-Channel Adv Q-FET C-Series

MOSFET 600V N-Channel Adv Q-FET C-Series

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 127243-FQP6N60C 278-FQP6N60C FQP6N60C-ND FQP6N60C FQP6N60C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP6N60C N-Channel 600V 5.5A TO-220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 125000 milliwatts 125000 milliwatts
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