onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N50 FQP13N50

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016449-FQP13N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 12.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 430 mOhm @ 6.25A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016449-FQP13N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 12.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 430 mOhm @ 6.25A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N50 - 016449-FQP13N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N50
016449-FQP13N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N50 016449-FQP13N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016449-FQP13N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 12.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 430 mOhm @ 6.25A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016449-FQP13N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2300pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 430 mOhm @ 6.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Lighting
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP13N50 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP13N50
Single FETs, MOSFETs FQP13N50
MOSFET N-CH 500V 12.5A TO220-3

MOSFET N-CH 500V 12.5A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP13N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP13N50-ND
Single FETs, MOSFETs FQP13N50-ND
N-Channel 500V 12.5A (Tc) 170W (Tc) Through Hole TO-220-3

N-Channel 500V 12.5A (Tc) 170W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP13N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP13N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP13N50
MOSFET N-CH 500V 12.5A TO220-3

MOSFET N-CH 500V 12.5A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP13N50
MOSFET FQP13N50
MOSFET 500V N-Channel QFET

MOSFET 500V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016449-FQP13N50 FQP13N50 FQP13N50-ND FQP13N50 FQP13N50
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP13N50 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 94-2110-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2PB709ASL/PA215 - 855010-2PB709ASL/PA215 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details