onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 FQP12P10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204297-FQP12P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204297-FQP12P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 - 204297-FQP12P10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10
204297-FQP12P10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 204297-FQP12P10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204297-FQP12P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204297-FQP12P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP12P10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP12P10-ND
Single FETs, MOSFETs FQP12P10-ND
P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3

P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
P-Channel -100V -11.5A TO-220 MOSFET Transistor
278-FQP12P10
P-Channel -100V -11.5A TO-220 MOSFET Transistor 278-FQP12P10
P-Channel MOSFET, -100V, -11.5A, 290mR, TO-220 Product overview: FQP12P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -100V, -11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP12P10 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, -100V, -11.5A, 290mR, TO-220 Product overview: FQP12P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -100V, -11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP12P10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP12P10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP12P10
Single FETs, MOSFETs FQP12P10
MOSFET P-CH 100V 11.5A TO220-3

MOSFET P-CH 100V 11.5A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP12P10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP12P10
Single FETs, MOSFETs FQP12P10
POWFIELD-EFFETRANSIS TO11.51000.2

POWFIELD-EFFETRANSISTO11.51000.2

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP12P10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP12P10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP12P10
MOSFET P-CH 100V 11.5A TO220-3

MOSFET P-CH 100V 11.5A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP12P10
MOSFET FQP12P10
MOSFET 100V P-Channel QFET

MOSFET 100V P-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204297-FQP12P10 FQP12P10-ND 278-FQP12P10 FQP12P10 FQP12P10 FQP12P10 FQP12P10
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 Single FETs, MOSFETs P-Channel -100V -11.5A TO-220 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 100 volts 100 volts
PD 75000 milliwatts 75000 milliwatts 75000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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