MOSFET P-CH 100V 11.5A TO220-3
POWFIELD-EFFETRANSIS
P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204297-FQP12P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET P-CH 100V 11.5A TO220-3
| ODG (Origin Data Global) | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQP12P10 | FQP12P10 | FQP12P10-ND | 204297-FQP12P10 | FQP12P10 | FQP12P10 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| IDSS | 11500 milliamps |
