Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204297-FQP12P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3
P-Channel MOSFET, -100V, -11.5A, 290mR, TO-220 Product overview: FQP12P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -100V, -11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP12P10 can be used for catalog matching and distributor lookup.
MOSFET P-CH 100V 11.5A TO220-3
POWFIELD-EFFETRANSIS
MOSFET P-CH 100V 11.5A TO220-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 204297-FQP12P10 | FQP12P10-ND | 278-FQP12P10 | FQP12P10 | FQP12P10 | FQP12P10 | FQP12P10 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 | Single FETs, MOSFETs | P-Channel -100V -11.5A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 75000 milliwatts | 75000 milliwatts | 75000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |