onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 FQP12P10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204297-FQP12P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204297-FQP12P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 - 204297-FQP12P10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10
204297-FQP12P10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 204297-FQP12P10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204297-FQP12P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204297-FQP12P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 290 mOhm @ 5.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP12P10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP12P10-ND
Single FETs, MOSFETs FQP12P10-ND
P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3

P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
P-Channel -100V -11.5A TO-220 MOSFET Transistor
278-FQP12P10
P-Channel -100V -11.5A TO-220 MOSFET Transistor 278-FQP12P10
P-Channel MOSFET, -100V, -11.5A, 290mR, TO-220 Product overview: FQP12P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -100V, -11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP12P10 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, -100V, -11.5A, 290mR, TO-220 Product overview: FQP12P10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -100V, -11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP12P10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP12P10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP12P10
Single FETs, MOSFETs FQP12P10
MOSFET P-CH 100V 11.5A TO220-3

MOSFET P-CH 100V 11.5A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP12P10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP12P10
Single FETs, MOSFETs FQP12P10
POWFIELD-EFFETRANSIS TO11.51000.2

POWFIELD-EFFETRANSISTO11.51000.2

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP12P10
MOSFET FQP12P10
MOSFET 100V P-Channel QFET

MOSFET 100V P-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP12P10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP12P10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP12P10
MOSFET P-CH 100V 11.5A TO220-3

MOSFET P-CH 100V 11.5A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204297-FQP12P10 FQP12P10-ND 278-FQP12P10 FQP12P10 FQP12P10 FQP12P10 FQP12P10
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP12P10 Single FETs, MOSFETs P-Channel -100V -11.5A TO-220 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 100 volts 100 volts
PD 75000 milliwatts 75000 milliwatts 75000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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