onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20TU FQI4N20TU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039801-FQI4N20TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.5nC @ 10V Max Input Capacitance: 220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20TU - 1039801-FQI4N20TU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI4N20TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039801-FQI4N20TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.5nC @ 10V Max Input Capacitance: 220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20TU - 1039801-FQI4N20TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20TU
1039801-FQI4N20TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20TU 1039801-FQI4N20TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039801-FQI4N20TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.5nC @ 10V Max Input Capacitance: 220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039801-FQI4N20TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.5nC @ 10V
Max Input Capacitance: 220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI4N20TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI4N20TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI4N20TU
MOSFET N-CH 200V 3.6A I2PAK

MOSFET N-CH 200V 3.6A I2PAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039801-FQI4N20TU FQI4N20TU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20TU Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 3130 to 45000 milliwatts
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