Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 105278-FQD2N90TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7.2 Ohm @ 850mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
900V N-CH MOSFET 1.7A 7.2R DPAK Surface Mount Product overview: FQD2N90TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 900V, 1.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 900V, 1.7A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD2N90TF can be used for catalog matching and distributor lookup.
MOSFET N-CH 900V 1.7A DPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 105278-FQD2N90TF | 278-FQD2N90TF | FQD2N90TF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N90TF | SMD 900V 1.7A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 900 volts | ||
| PD | 2500 to 50000 milliwatts | 50000 milliwatts |