onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N10LTF FQD13N10LTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039692-FQD13N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039692-FQD13N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N10LTF - 1039692-FQD13N10LTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N10LTF
1039692-FQD13N10LTF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N10LTF 1039692-FQD13N10LTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039692-FQD13N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039692-FQD13N10LTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FQD13N10LTF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD13N10LTF-ND
Single FETs, MOSFETs FQD13N10LTF-ND
N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount TO-252AA

N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
100V 10A DPAK MOSFET Transistor
278-FQD13N10LTF
100V 10A DPAK MOSFET Transistor 278-FQD13N10LTF
MOSFET N-CH 100V 10A DPAK Product overview: FQD13N10LTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 10A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 10A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD13N10LTF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 10A DPAK Product overview: FQD13N10LTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 10A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 10A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD13N10LTF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039692-FQD13N10LTF FQD13N10LTF-ND 278-FQD13N10LTF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N10LTF Single FETs, MOSFETs 100V 10A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 2500 to 40000 milliwatts 40000 milliwatts
Unlock Full Specs
to access all available technical data