CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET 4-DSBGA
Manufacturer: Texas Instruments
Win Source Part Number: 1163545-CSD23202W10
Manufacturer Homepage: www.ti.com
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA Product overview: CSD23202W10 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 53 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 53 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD23202W10 can be used for catalog matching and distributor lookup.
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| Texas Instruments | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD23202W10 | 1163545-CSD23202W10 | 296-40000-2-ND | 278-CSD23202W10 | CSD23202W10 | CSD23202W10 | CSD23202W10 |
| Product Name | CSD23202W10 CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23202W10 | Single FETs, MOSFETs | P-Channel 53 mOhm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| V(BR)DSS | -12 volts | 12 volts | |||||
| rDS(on) | 0.0530 ohms | ||||||
| IDSS | -25000 milliamps | 2200 milliamps | |||||
| QG | 2.9 nC |
