POWER FIELD-EFFECT TRANSISTOR, 8
N-Channel 900V 8.6A (Tc) 240W (Tc) Through Hole TO-3PN
MOSFET N-CH 900V 8.6A TO-3P
MOSFET N-CH 900V 8.6A TO3PN
| ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQA9N90-F109 | FQA9N90-F109-ND | 598-FQA9N90-F109 | FQA9N90-F109 | FQA9N90-F109 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET N-CH 900V 8.6A TO-3P | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||
| V(BR)DSS | 900 volts | 900 volts | |||
| IDSS | 8600 milliamps | ||||
| PD | 240000 milliwatts | 240000 milliwatts |
