onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA6N90C FQA6N90C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204269-FQA6N90C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 198W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1770pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.3 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204269-FQA6N90C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 198W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1770pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.3 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA6N90C - 204269-FQA6N90C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA6N90C
204269-FQA6N90C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA6N90C 204269-FQA6N90C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204269-FQA6N90C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 198W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1770pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.3 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204269-FQA6N90C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 198W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1770pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.3 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204269-FQA6N90C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA6N90C
Polarity N-Channel; N-Channel
V(BR)DSS 900 volts
PD 198000 milliwatts
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