onsemi Single FETs, MOSFETs FDZ192NZ

The FDZ192NZ is an N-channel MOSFET designed for battery management, load switch, and battery protection applications, fabricated using a 1.5 V PowerTrench process with a WLCSP6 package measuring 1.5 mm × 1 mm × 0.6 mm and occupying 1.5 mm² of PCB area. It has a maximum drain-to-source voltage of 20 V and a continuous drain current of 5.3 A. Static drain-to-source on-resistance is maximized at 39 mΩ at VGS = 4.5 V and ID = 2.0 A, and 55 mΩ at VGS = 1.5 V and ID = 1.0 A. The device is Pb-free, halogen-free, RoHS compliant, and features HBM ESD protection exceeding 2200 V. Thermal resistance junction-to-ambient is 65 °C/W when mounted on a 1 in² 2 oz copper pad.