onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6N50TU FDU6N50TU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040273-FDU6N50TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.6nC @ 10V Max Input Capacitance: 940pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 5,040
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040273-FDU6N50TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.6nC @ 10V Max Input Capacitance: 940pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 5,040
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6N50TU - 040273-FDU6N50TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6N50TU
040273-FDU6N50TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6N50TU 040273-FDU6N50TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040273-FDU6N50TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.6nC @ 10V Max Input Capacitance: 940pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040273-FDU6N50TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16.6nC @ 10V
Max Input Capacitance: 940pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 900 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040

Buy Now Datasheet
Single FETs, MOSFETs - FDU6N50TU-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDU6N50TU-ND
Single FETs, MOSFETs FDU6N50TU-ND
N-Channel 500V 6A (Tc) 89W (Tc) Through Hole I-PAK

N-Channel 500V 6A (Tc) 89W (Tc) Through Hole I-PAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 500V N-Channel MOSFET

MOSFET 500V N-Channel MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDU6N50TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDU6N50TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDU6N50TU
MOSFET N-CH 500V 6A IPAK

MOSFET N-CH 500V 6A IPAK

Supplier's Site
Mosfet, N-Ch, 500V, 6A, Ipak; Channel Type Onsemi - 86K1401 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 6A, Ipak; Channel Type Onsemi
86K1401
Mosfet, N-Ch, 500V, 6A, Ipak; Channel Type Onsemi 86K1401
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 040273-FDU6N50TU FDU6N50TU-ND FDU6N50TU FDU6N50TU 86K1401
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6N50TU Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 500V, 6A, Ipak; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 89000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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