MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Mosfet Array 2 N-Channel (Dual) 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067097-FDS6982S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A, 8.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 2040pF @ 10V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Computers & Computer Peripherals
30V 8.6A N-Channel MOSFET, SOIC, 16mR Rds(on) Product overview: FDS6982S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.6A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6982S can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
N CHANNEL / SCHOTTKY MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.012ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
| ODG (Origin Data Global) | ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6982S | FDS6982S | FDS6982S-ND | 067097-FDS6982S | 289-FDS6982S | FDS6982S | 34C0179 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982S | N-Channel 30V 8.6A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel / Schottky Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 6300 milliamps | 6300 milliamps | 8600 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
