onsemi FET, MOSFET Arrays FDS6982S

Description
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Request a Quote Datasheet
Description
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS6982S - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6982S
FET, MOSFET Arrays FDS6982S
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS6982S - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6982S
FET, MOSFET Arrays FDS6982S
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site Datasheet
Singapore
N-Channel 30V 8.6A SOIC MOSFET Transistor
289-FDS6982S
N-Channel 30V 8.6A SOIC MOSFET Transistor 289-FDS6982S
30V 8.6A N-Channel MOSFET, SOIC, 16mR Rds(on) Product overview: FDS6982S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.6A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6982S can be used for catalog matching and distributor lookup.

30V 8.6A N-Channel MOSFET, SOIC, 16mR Rds(on) Product overview: FDS6982S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.6A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6982S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS6982S-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6982S-ND
FET, MOSFET Arrays FDS6982S-ND
Mosfet Array 2 N-Channel (Dual) 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982S - 067097-FDS6982S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982S
067097-FDS6982S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982S 067097-FDS6982S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067097-FDS6982S Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.3A, 8.6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 2040pF @ 10V Maximum Rds On at Id,Vgs: 28 mOhm @ 6.3A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Computers & Computer Peripherals

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067097-FDS6982S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A, 8.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 2040pF @ 10V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Computers & Computer Peripherals

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6982S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6982S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6982S
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

Supplier's Site
N Channel / Schottky Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi - 34C0179 - Newark, An Avnet Company
Chicago, IL, United States
N Channel / Schottky Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi
34C0179
N Channel / Schottky Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi 34C0179
N CHANNEL / SCHOTTKY MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.012ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

N CHANNEL / SCHOTTKY MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.012ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS6982S FDS6982S 289-FDS6982S FDS6982S-ND 067097-FDS6982S FDS6982S 34C0179
Product Name FET, MOSFET Arrays FET, MOSFET Arrays N-Channel 30V 8.6A SOIC MOSFET Transistor FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982S Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel / Schottky Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi
Polarity N-Channel; 2 N-Channel (Dual) N-Channel; 2 N-Channel (Dual) N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 6300 milliamps 6300 milliamps 8600 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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