P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016161-FDS6675BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS6675BZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 2470pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): UPA2719GR-E1; TPC8119; TPC8125(LCANOQ,S); TPC8119(TE12L,Q);
Introduction Date: April 20, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics
Quantity per package: 2,500
MOSFET P-CH 30V 11A 8SOIC
30V 11A 13mΩ@10V,11A 2.5W 3V@250uA P Channel SO-8 MOSFETs ROHS
MOSFET -30V P-Channel PwrTrch MOSFET
P CHANNEL MOSFET, -30V, -11A; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(on):0.0108ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, P Channel, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, -11A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET P-CH 30V 11A 8SOIC
| DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6675BZCT-ND | 016161-FDS6675BZ | 6710598 | 6710598P | FDS6675BZ | FDS6675BZ | FDS6675BZ | 15R3433 | 61M6314 | 86K1386 | FDS6675BZ |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6675BZ | MOSFETs | MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | P Channel Mosfet, -30V, -11A; Transistor Polarity Onsemi | Mosfet Transistor, P Channel, 11 A, -30 V, 0.0108 Ohm, -10 V, -2 V Rohs Compliant Onsemi | P Channel Mosfet, -30V, -11A, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Soic | SOIC | 8-SOIC (0.154", 3.90mm Width) | SO-8 | TO-3 | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | |
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
