Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFU8405 AUIRFU8405

Manufacturer: Infineon Technologies
Win Source Part Number: 1020784-AUIRFU8405
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 163W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 100μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 5171pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.98 mOhm @ 90A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Product overview: AUIRFU8405 from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AUIRFU8405 can be used for catalog matching and distributor lookup.

N-Channel 40V 100A (Tc) 163W (Tc) Through Hole I-PAK