Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016148-FDS5680
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS5680
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1850pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): Si4850EY-E3; Si4850EY; Si4850EY-T1; Si4850EY-T1-E3;
Introduction Date: August 26, 1999
ECCN: EAR99
Country of Origin: China, Israel
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET N-CH 60V 8A 8SOIC
N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel MOSFET, 60V, 8A, 20mR, SOIC Product overview: FDS5680 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS5680 can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 60V, 8A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5WRoHS Compliant: Yes
MOSFET N-CH 60V 8A 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016148-FDS5680 | FDS5680 | FDS5680TR-ND | 278-FDS5680 | 38C7160 | 67R2072 | FDS5680 | FDS5680 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5680 | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 60V 8A SOIC MOSFET Transistor | N Channel Mosfet, 60V, 8A, Soic; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
