Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204121-FDP8896
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 92A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 2525pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.9 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET N-CH 30V 16A/92A TO220-3
MOSFETs 30V N-Channel PowerTrench Product overview: FDP8896 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP8896 can be used for catalog matching and distributor lookup.
N-Channel 30V 16A (Ta), 92A (Tc) 80W (Tc) Through Hole TO-220-3
MOSFET N-CH 30V 16A/92A TO220-3
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 204121-FDP8896 | FDP8896 | 2088-FDP8896 | 6714875 | FDP8896-ND | FDP8896 | FDP8896 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8896 | Single FETs, MOSFETs | N-Channel 30V MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 80000 milliwatts | 80000 milliwatts | 80 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-220; To-220ab | TO-220; TO-220-3 | TO-220; TO-220-3 |
