Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016045-FDMC8878
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3), Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.6A (Ta), 16.5A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 9.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
N-Channel 30V 9.6A (Ta), 16.5A (Tc) 2.1W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 30V 9.6A (Ta), 16.5A (Tc) 2.1W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 30V 9.6A (Ta), 16.5A (Tc) 2.1W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET N-CH 30V 9.6A/16.5A 8MLP
MOSFET 30V N-CH PowerTrench MOSFET
N CH MOSFET, 30V, 9.6A, POWER 33, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 0.0096OHM, 16.5A, MLP-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:31W RoHS Compliant: Yes
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:16.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.1W;RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016045-FDMC8878 | FDMC8878DKR-ND | FDMC8878 | FDMC8878 | 52M3181 | 67P3478 | 61M6264 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8878 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Ch Mosfet, 30V, 9.6A, Power 33, Full Reel; Channel Type Onsemi | Mosfet, N Channel, 30V, 0.0096Ohm, 16.5A, Mlp-8; Channel Type Onsemi | Mosfet, N, Smd, Mlp; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | ||||||
| PD | 2100 to 31000 milliwatts | 31000 milliwatts | 2100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
